The ability to reliably switch the direction of magnetic alignment in materials, a process known as magnetization switching, is known to be central to the functioning of most memory devices. One known strategy to achieve entails the creation of a rotational force (i.e., torque) on electron spins via an electric current; a physical effect known as spin-orbit torque (SOT).
Next-generation memory: Tungsten-based SOT-MRAM achieves nanosecond switching and low-power data storage
