A team led by academician Huang Ru and Professor Wu Yanqing from the School of Integrated Circuits at Peking University has developed a super-thin, high-performance semiconductor with enhanced heat conductivity, enabled by a silicon carbide (SiC) substrate. The research, published in Nature Electronics under the title “Amorphous indium tin oxide transistors for power amplification above 10 GHz,” marks a significant step forward in next-generation radio-frequency (RF) electronics.
Super-thin semiconductor overcomes trade-off between speed and thermal stability
