Graphene, a single sheet of carbon atoms arranged in a honeycomb lattice, is known for its exceptional strength, flexibility and conductivity. However, despite holding the world record for room-temperature electron mobility, graphene’s performance at cryogenic temperatures has remained below that of the best gallium arsenide (GaAs)-based semiconductor systems, which have benefited from many decades of refinement.
Two new methods push graphene’s electronic quality beyond traditional semiconductors
