A research group has announced a new iPMA-type Hexa-technology in Magnetic Tunnel Junctions (MTJ) that unlocks the door to improving ultra-low power in IoT edge-devices, mobile, automotive, consumer electronics, and applications operating in harsh environments, such as autonomous vehicles, industrial robots, and space applications. Crucially, the new technology is compatible with design rules for X nm generation complementary metal-oxide semiconductor (CMOS) nodes.
25-nm iPMA Hexa-MTJ technology for scalable eFlash type STT-MRAM
